PART |
Description |
Maker |
AS4C256K16F0-30TC AS4C256K16F0-50TC AS4C256K16F0-5 |
5V 256K X 16 CMOS DRAM (Fast Page Mode) 256K X 16 FAST PAGE DRAM, 50 ns, PDSO40 x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Alliance Semiconductor Corp... Electronic Theatre Controls, Inc.
|
HY514170BSLRC-70 HY514170BTC-70 HY514170BSLTC-70 H |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Dialight PLC
|
NN511666J-45 NN511663J-45 NN511666LJ-40 NN511663LJ |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Glenair, Inc.
|
TMS44165L-80DGE TMS44165L-70DGE TMS44165L-10DGE TM |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
SCHURTER AG
|
V53C665Z80 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
EPCOS AG
|
UPD4216160LLE-A80 UPD4217400LG3-A80 UPD42S16400LG3 |
x16 Fast Page Mode DRAM x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
EPCOS AG
|
AS4C1M16E5-50TI AS4C1M16E5-50JI AS4C1M16E5-60TI AS |
5V 1M×16 CMOS DRAM (EDO) x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Alliance Semiconductor Corporation Integrated Silicon Solution, Inc. Lattice Semiconductor, Corp.
|
UPD42S17170LLE-A70 UPD42S17170LG5-A70-7KF UPD42S17 |
72-Mbit QDR-II SRAM 2-Word Burst Architecture x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Vishay Intertechnology, Inc.
|
UPD424263LLE-A80 UPD424263LLE-A70 UPD424263LG5M-A6 |
20-output, 200-MHz Zero Delay Buffer 16 Kbit (2K x 8) nvSRAM 3.3V Zero Delay Buffer x16 Fast Page Mode DRAM Three-PLL General-Purpose EPROM Programmable Clock Generator Phase-Aligned Clock Multiplier x16快速页面模式的DRAM
|
Cooper Hand Tools
|
M5M465400DTP-6S M5M467400DTP-6S M5M465160DTP-5 M5M |
FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM 快速页面模7108864位(16777216 - Word位)动态随机存储器 4M X 16 FAST PAGE DRAM, 50 ns, PDSO50 16M X 4 FAST PAGE DRAM, 50 ns, PDSO32
|
Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode) 5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time 5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time 5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|